| 摘要: |
| 介绍了一种基于树脂基晶圆级扇出封装的K波段器件化R组件。采用互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，CMOS)工艺和砷化镓（GaAs）工艺相结合的芯片架构，实现了一种紧凑型8通道数控延时低噪声放大前端。采用塑封扇出晶圆级封装工艺，通过在两种芯片上合理设置接地焊盘位置，再借助晶圆级封装的再布线设计和植球工艺，实现单个封装内多通道间以及多个封装间的良好电磁屏蔽。采用多物理场协同仿真方式，将无源互连的场级全波仿真结果与有源电路的电路级仿真结果进行场路协同联合仿真，通过场路协同调谐优化，得到最优宽带匹配效果，研制出了一款晶圆级扇出封装器件化R组件。实测表明在K波段噪声系数小于2.1 dB，小信号增益大于22 dB，延时误差均方根小于1.8 ps。R组件尺寸为11 mm×8 mm×0.7 mm，重量仅0.2 g。该设计方案充分发挥了CMOS工艺数模混合集成能力和GaAs工艺优异的射频性能，实现了R组件更高的功能密度、通道密度和低成本需求，具有一定的工程应用价值。 |
| 关键词: 相控阵天线 K波段R组件 晶圆级扇出封装 场路协同仿真 |
| DOI：10.20079/j.issn.1001-893x.240528001 |
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| 基金项目: |
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| Design of a K-band Wafer-level Package Rx Module |
| ZHU Guide,LUO Xin,WANG Junhui,LUO Li,HE Xiaofeng |
| (Southwest China Institute of Electronic Technology,Chengdu 610036,China) |
| Abstract: |
| A K-band device Rx（Recieve） module based on resin-based fan-out wafer-level package is presented.A compact 8-channel numerical control delay low noise amplification front end is realized by using a chip architecture combining complementary metal oxide semiconductor(CMOS) process and GaAs process.By using the plastic-sealed fan-out wafer-level packaging technology,the ground pad position is set reasonably on two kinds of chips,and then with the help of the rewiring design of wafer-level packaging and the planting ball technology,the electromagnetic shielding between multiple channels and multiple packages is realized in a single package.A wafer-level fan-out package device Rx module is developed by using a multi-physical field co-simulation method,which combines the field-level full-wave simulation results of passive interconnection with the circuit-level simulation results of active circuits.The measured results show that the noise coefficient is less than 2.1 dB in K-band,the small signal gain is more than 22 dB,the delay error root mean square is less than 1.8 ps,the size of the Rx module is 11 mm×8 mm×0.7 mm,and the weight is only 0.2 g.This design scheme gives full play to the digital-analog hybrid integration capability of the CMOS process and the excellent RF performance of the GaAs process,realizes the higher functional density,channel density,and low-cost requirements of R components,and has certain engineering application value. |
| Key words: phased array antenna K-band Rx module wafer-level fan-out package field-circuit co-simulation |
