| 摘要: |
| 研制了一种性能优良的全固态C频段高效率移相氮化镓（GaN）功率放大器模块。介绍了该功
放模块设计方案及工作原理,并给出了该功放模块技术参数实验测试结果。该模块
输出功率30 W，带宽10 MHz，带有6位移相功能，具有C频段高频率、固态、小型化
、高效率、高功率密度、高击穿电压特性，是一种目前国内外尚无类似集成设计的最新高
性能氮化镓（GaN）功率放大器模块。因其功放模块输出末级采用了美国Cree公司第三代宽
禁带GaN功放管优化设计，实现了固态C频段高效率功率输出。 |
| 关键词: 固态功率放大器 C频段GaN功率放大器 高效率 宽禁带GaN器件 |
| DOI： |
|
| 基金项目: |
|
| A new C-band phase shifted high efficiency GaN power amplifier |
| LIANG Qin-jin,DONG Si-hua,ZHENG Qiang-lin,YU Chuan |
| () |
| Abstract: |
| A high-efficiency solid-state C-band
phase shifted gallium nitride (GaN) power amplifier module with excellent perfor
mance has been developed. T
he design scheme and working principle of GaN power amplifier module are in
troduced, and the experimental test results of power amplifier module technical
paramters are given. The output power of the module is 30 W (CW), bandwidth
is 10 MHz, with 6 bit phase shift.It is featured by C-band high-frequency,
high efficiency,high power density and high breakdown voltage. Currently, it is
a latest high-performance GaN power amplifier module with no similar inter
grated design at home and abroad. The last stage of the power amplifier is opt
imized by using a third generation wide bandgap GaN amplifier tube from the Amer
ican Cree Ltd. It can realize all solid-state C-band high-efficiency output p
ower. |
| Key words: solid-state power amplifier C-band GaN power amplifier high efficiency wide
bandgap GaN device |
