| 摘要: |
| 改善功率VMCS器件设计的一个关键问题,是如何对耐压BV_(DSS)和导通电阻R_(on)进行合理的最佳化折衷。本文采用计算机辅助设计(CAD)的方法对各种可能的工艺和结构参数进行了大量计算,按照实际生产中的工艺条件进行筛选,得出了最佳化的设计参数。经与VN0906参照对比,证明设计是十分有效和准确的。 |
| 关键词: VMOS 功率 MOSFET 最佳化 |
| DOI： |
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| The optimal trade--off between BV_(DSS) &R_(on) for Fower MOSFET |
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| Abstract: |
| The most important problem for improving VMOS design is how to made-a trade-off between BV_(DSS) and R_(on) reasonably. This paper caculates various set ofparameters with CAD Technology to give optimal design parameters. The caculatedresults are close to those of VN0906 by testing. |
| Key words: Power MOSFET,Optimal Trade-off |
