| 摘要: |
| 针对民机卫星通信（Satellite Communications，SATCOM）应用对低成本和高集成化的迫切需求，采用65 nm CMOS（Complementary Metal Oxide Semiconductor）工艺设计了一款Ka波段AB类宽带功率放大器（Power Amplifier，PA)。其中，有源放大级中的功率管芯构建采用了新型晶体管源-漏交换方式优化布局，降低寄生损耗从而提升效率；同时引入了中和电容技术以提高电路增益和稳定性；无源网络部分采用基于变压器结构的耦合谐振腔（Magnetically Coupled Resonator，MCR）设计以提升放大器带宽。在此基础上，结合多通道整芯片工程应用中对PA信号输出焊盘布局的考虑，探究了该耦合谐振腔网络拓扑进行旋转弯折而不影响最终信号输出的幅度/相位一致性。这为后期多通道发射整芯片设计中边缘通道采用转角（L型）输出、中间通道采用直通（I型）输出提供了巨大便利且不占用额外芯片面积。测试结果表明，该PA增益为23 dB，饱和输出功率为14.8 dBm，峰值功率附加效率为35.3%，增益平坦度优于0.5 dB（25.5~30.5 GHz），3dB工作频率覆盖24~32.5 GHz，相对带宽达到30%。 |
| 关键词: 卫星通信 CMOS功率放大器 源-漏交换 耦合谐振腔 |
| DOI：10.20079/j.issn.1001-893x.241009001 |
|
| 基金项目: |
|
| A Ka-band Class-AB Broadband CMOS Power Amplifier for SATCOM Applications |
| LIU Zhiqing |
| (Southwest China Institute of Electronic Technology，Chengdu 611036，China) |
| Abstract: |
| According to the urgent demand for low cost and high integration in satellite communications(SATCOM) applications for civil aircraft，a Ka-band class-AB broadband power amplifier(PA) in 65 nm complementary metal oxide semiconductor(CMOS) process is presented.In this design，active amplification stages adopt a novel MOSFET source-drain swap method to optimize the layout and reduce parasitic losses for improving efficiency.Meanwhile，the neutralization capacitor technique is introduced to improve the circuit gain and stability.For the passive matching network，a design method of the transformer-based magnetically coupled resonator(MCR) is utilized to enhance PA bandwidth.On this basis，considering placement of PA signal output pads in practical engineering applications of multi-channel chip，the MCR network topology is explored for rotational bending without affecting the amplitude/phase consistency of the final output signal.This provides great convenience for arrange of the L-shaped amplifier versions around the chip edge channel and the I-shaped amplifier versions in the chip internal channel，without requiring extra chip area.According to the measurement results，the PA achieves a gain of 23 dB，a saturated output power of 14.8 dBm，a peak power added efficiency of 35.3%，a gain flatness of less than 0.5 dB within 25.5 GHz to 305 GHz.The fractional bandwidth of the PA is 30% from 24 GHz to 32.5 GHz. |
| Key words: satellite communications CMOS power amplifier source-drain swap magnetically coupled resonatord |
《电讯技术》编辑部 