| 摘要: |
| 提出了一种紧凑的射频互补金属氧化物半导体(Complementary Metal Oxide Semiconductor，CMOS)放大器LC输出匹配电路，利用放大器漏极偏置电感、输出端隔直电容与放大器输出端并联电感电容形成高阶LC谐振网络，可在占用较小芯片面积的条件下实现较传统L型匹配电路更宽频率范围的输出阻抗匹配。推导了该LC输出匹配电路元件值的计算式，并根据提出的设计方法，采用65 nm CMOS工艺设计了一款K频段放大器，其输出匹配电路尺寸仅98 μm ×150 μm。仿真结果表明，在16.5~22.1 GHz频率范围内放大器的玈22<-10 dB，阻抗匹配带宽相比L型匹配电路增加166%。放大器实测S参数和仿真结果相符，验证了该LC匹配电路可实现紧凑的宽带阻抗匹配。 |
| 关键词: 紧凑匹配电路 射频CMOS放大器 宽带阻抗匹配 LC谐振网络 |
| DOI：10.20079/j.issn.1001-893x.230221002 |
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| 基金项目: |
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| A Compact RF CMOS Amplifier LC Output Matching Circuit |
| ZHAO Xiaodong |
| (Southwest China Institute of Electronic Technology,Chengdu 610036,China) |
| Abstract: |
| A compact radio frequency(RF) complementary metal oxide semiconductor(CMOS) amplifier LC output matching circuit is proposed.A high-order LC resonant network is formed by using the drain bias inductor,the output DC block capacitor,and the output parallel LC of the amplifier.It can achieve output impedance matching in a wider frequency range than traditional L-type matching circuit under the condition of occupying a small chip area.The formula for calculating the component values of the LC output matching circuit is deduced,and according to the proposed design method,a K-band amplifier is designed with a 65 nm CMOS process,and its output matching circuit size is only 98 μm×150 μm.The simulation results show that 玈22 of the amplifier is less than -10 dB in 16.5~22.1 GHz,and the impedance matching bandwidth is increased by 166% compared with that of the L-type matching circuit.The measured S-parameters of the amplifier are consistent with the simulation ones,which verifies that the LC matching circuit can achieve compact broadband impedance matching. |
| Key words: compact matching circuit RF CMOS amplifier broadband impedance matching LC resonant network |
