| 摘要: |
| 基于自主研发GaAs肖特基二极管（SBD）设计了一款工作于W频段的二次谐波混频器，实现了对射频（RF）信号的I/Q调制。建立了二极管模型,利用电路结构走线长度控制信号流，实现了宽频带内的射频信号混频，并基于此通过HFSS和ADS联合仿真，完成了W频段二次谐波混频器设计。测试结果显示，采用45 GHz信号作为本振信号源，射频80~89 GHz与91~100 GHz的频带范围内变频损耗低于17 dB,最低变频损耗为12 dB；1 dB压缩功率大于11 dBm。仿真结果显示，80~89 GHz与91~100 GHz的镜频抑制效果明显，最好频点镜像抑制达到20 dB。相比于W频段GaAs pHEMT（赝晶型高电子迁移率晶体管）混频器，所设计的GaAs肖特基二极管混频器在较低变频损耗的情况下，具有工艺简单、易实现、高线性度、宽带匹配、高镜像抑制等优点，芯片尺寸仅为1 mm×1 mm。该款W频段混频器达到了目前国内较高水平。 |
| 关键词: W频段 谐波混频器 I/Q调制 GaAs肖特基二极管 |
| DOI： |
|
| 基金项目:国家自然科学基金资助项目(61601468);中央高校基本科研业务费项目中国民航大学专项(3122017087);中国民航大学科研启动基金项目(2016QD01X) |
|
| Design of a second harmonic I/Q mixer in W-band |
| GUO Dong,LIU Xiaoyu,ZHAO Hua,WANG Xi,ZHOU Jingtao |
| (1.Institute of Microelectronics of Chinese Academy of Sciences,Chinese Academy of Sciences,Beijing 100029,China;2.University of Chinese Academy of Sciences,Beijing 100049,China;School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China) |
| Abstract: |
| Based on the self-developed GaAs Schottky diode(SBD),a second-harmonic mixer working in W-band is designed to implement I/Q modulation of radio frequency(RF) signals.A diode model is established,and the length of the traces of the circuit structure is used to control the signal flow to achieve the mixing of the RF signals in a wide frequency band.On this base,High Frequency Structure Simulator(HFSS) and Advanced Design System(ADS) co-simulation are performed to complete the W-band second harmonic mixer design.Test results show that when the 45 GHz signal is used as the local oscillator signal source,the frequency conversion loss of the RF 80~89 GHz and 91~100 GHz bands is less than 17 dB,and the minimum conversion loss is 12 dB.The 1 dB compression power is greater than 11 dBm.Simulation results show that the image rejection effect of 80~89 GHz and 91~100 GHz is obvious,and the best frequency image rejection is 20 dB.Compared with W-band GaAs pHEMT mixers,the designed SBD mixer is featured by simple process,easy implementation,high linearity,wideband matching,and high mirroring at low conversion loss.And the chip area is only 1 mm2.The W-band mixer has reached a domestic higher level of its kind. |
| Key words: W-band sub-harmonic mixer I/Q modulation GaAs Schottky diode |
《电讯技术》编辑部 