| 摘要: |
| 介绍了一种新研制的W频段固态GaN功率放大器毫米波源，给出了系统组成与工作原理，提供了其主要部件W频段固态Gunn驱动源、W频段波导-微带转换器、主放大器芯片基本性能及实验测试结果。该固态毫米波源工作频率94 GHz，输出连续波功率大于300 mW，线性增益10 dB，附加效率（PAE）大于16%.在W频段固态毫米波源研制过程中，其单片微波集成电路（MMIC）功率放大器半导体材料选择经历了GaAs、InP到GaN演变，结果清楚表明，W频段毫米波源的GaN MMlC功率放大器输出功率、增益、效率、高温性能要优于其他固态MMIC功率放大器性能。W频段大功率固态GaN MMlC技术将在毫米波领域带来新的技术革命和应用。 |
| 关键词: 毫米波源 GaN功率放大器 W频段 单片微波集成电路 连续波 |
| DOI： |
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| 基金项目:国家高技术研究发展计划（863计划）项目 |
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| A newly-developed W-band solid-state GaN power amplifier millimeter wave source |
| LIANG Qinjin,SHI Xiaoyan,PAN Wenwu,HUANG Jijin |
| () |
| Abstract: |
| This paper introduces a newly-developed W-band solid-state GaN power amplifier millimeter wave(MMW) source,gives its system composition and operational principle,and provides the basic performance and experimental results of primary components including W-band solid-state Gunn driving source,W-band guide-microstrip line transposition and main amplifier chip.The MMW source operates at 94 GHz,its continuous wave power output is larger than 300 mW，linear gain is 10 dB，power-added efficiency(PAE) is greater than 16%.During the development of W-band solid-state MMW source,the choice of its monolithic microwave integrated circuit(MMIC) power amplifier of semiconductor material has undergone GaN,GaAs and InP,which clearly demonstrates that the output power,gain,efficiency and high temperature performance of W-band GaN MMIC power amplifier is superior to that of other solid-state MMIC power amplifiers.The high power technology of W-band solid-state GaN MMIC is likely to result in new revolutionized technology and application in the MMW field. |
| Key words: millimeter wave source GaN power amplifier W-band MMIC continous wave |
《电讯技术》编辑部 