| 引用本文： |
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应子罡,吕昕,高本庆,李拂晓,YING Zi-gang,Lü Xin,GAO Ben-qing,LI Fu-xiao.宽带GaAs PHEMT VCO设计[J].电讯技术，2005，45（3）：112 - 116. [点击复制]
- .Design of Broadband GaAs PHEMT VCOs[J].，2005，45（3）：112 - 116. [点击复制]
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| 摘要: |
| 分析了宽带VCO的设计原理,阐明了设计步骤,采用双变容二极管的新型结构设计了2～4GHz、4～7GHz、7～12GHz和12～18GHz四个宽带GaAsVCO芯片以完全覆盖2～18GHz频段。仿真结果表明本文设计的VCO具有频带宽、负载牵引小、结构简单的特点,有很好的应用价值。 |
| 关键词: 宽带 压控振荡器 砷化镓赝晶高电子迁移率器件 设计 |
| DOI：10.3969/j.issn.1001-893X. |
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| Design of Broadband GaAs PHEMT VCOs |
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| Abstract: |
| The method and detailed steps of designing a broadband VCO are presented. A novel structure using two varactors is introduced to design four VCOs Chips which cover 2~4GHz,4~8GHz,8~12GHz and 12~18GHz frequency bands .The simulation results prove that these VCOs have the characteristics of broad frequency band,small load pulling and simple structure ,and they will have good practicability in the application. |
| Key words: Broadband,VCO,GaAs PHEMT,Design, |
《电讯技术》编辑部 